Terahertz time-domain-spectroscopy system based on 1.55 μm fiber laser and photoconductive antennas from dilute bismides

We describe a terahertz time-domain-spectroscopy system that is based on photoconductive components fabricated from (GaIn)(AsBi) epitaxial layers and activated by femtosecond 1.55 μm pulses emitted by an Er-doped fiber laser. (GaIn)(AsBi) alloy grown on GaAs substrates contained 12.5%In and 8.5%Bi –...

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Bibliographic Details
Published in:AIP advances 2016-02, Vol.6 (2), p.025218-025218-5
Main Authors: Urbanowicz, A., Pačebutas, V., Geižutis, A., Stanionytė, S., Krotkus, A.
Format: Article
Language:English
Subjects:
Conduction bands
Doped fibers
Epitaxial layers
Femtosecond pulses
Fiber lasers
Laser applications
Lasers
Noise levels
Parameters
Photosensitivity
Solid state lasers
Spectroscopy
Spectrum analysis
Substrates
Time domain analysis
Valence band
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Summary:We describe a terahertz time-domain-spectroscopy system that is based on photoconductive components fabricated from (GaIn)(AsBi) epitaxial layers and activated by femtosecond 1.55 μm pulses emitted by an Er-doped fiber laser. (GaIn)(AsBi) alloy grown on GaAs substrates contained 12.5%In and 8.5%Bi – a composition corresponding to a symmetrical approach of the conduction and valence band edges to each other. The layers were photosensitive to 1.55 μm wavelength radiation, had relatively large resistivities, and subpicosecond carrier lifetimes – a set of material parameters necessary for fabrication of efficient ultrafast photoconductor devices. The frequency limit of this system was 4.5 THz, its signal-to-noise ratio 65 dB. These parameters were comparable to their typical values for much bulkier solid-state laser based systems.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.4942819