Influence of piezoelectric strain on the Raman spectra of BiFeO3 films deposited on PMN-PT substrates

BiFeO3 epitaxial thin films were deposited on piezoelectric 0.72Pb(Mg1/3Nb2/3)O3-0.28PbTiO3 (PMN-PT) substrates with a conductive buffer layer (La0.7Sr0.3MnO3 or SrRuO3) using pulsed laser deposition. The calibration of the strain values induced by the electric field applied on the piezoelectric PMN...

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Bibliographic Details
Published in:Applied physics letters 2016-01, Vol.108 (4)
Main Authors: Himcinschi, Cameliu, Guo, Er-Jia, Talkenberger, Andreas, Dörr, Kathrin, Kortus, Jens
Format: Article
Language:English
Subjects:
Applied physics
Bismuth ferrite
Buffer layers
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
epitaxy
Gruneisen parameter
MATERIALS SCIENCE
Phonons
piezoelectric fields
Piezoelectricity
Pulsed laser deposition
Pulsed lasers
Raman spectra
Substrates
thin film structure
Thin films
X-ray diffraction
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Summary:BiFeO3 epitaxial thin films were deposited on piezoelectric 0.72Pb(Mg1/3Nb2/3)O3-0.28PbTiO3 (PMN-PT) substrates with a conductive buffer layer (La0.7Sr0.3MnO3 or SrRuO3) using pulsed laser deposition. The calibration of the strain values induced by the electric field applied on the piezoelectric PMN-PT substrates was realised using X-Ray diffraction measurements. The method of piezoelectrically induced strain allows one to directly obtain a quantitative correlation between the strain and the shift of the Raman-active phonons. This is a prerequisite for making Raman scattering a strong tool to probe the strain coupling in multiferroic nanostructures. Using the Poisson's number for BiFeO3, one can determine the volume change induced by strain, and therefore the Grüneisen parameters for specific phonon modes.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4940973