Strain-induced red-green-blue wavelength tuning in InGaN quantum wells

Monolithically integrating multi-color pixels from a standard InGaN quantum well active region was demonstrated with a wavelength tuning range of 178 nm. Nanopillar structures were fabricated to enable the wavelength tuning. Strain induced wavelength shift was investigated both experimentally and th...

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Bibliographic Details
Published in:Applied physics letters 2016-02, Vol.108 (7)
Main Authors: Teng, Chu-Hsiang, Zhang, Lei, Deng, Hui, Ku, Pei-Cheng
Format: Article
Language:English
Subjects:
Applied physics
Indium gallium nitrides
Quantum wells
Strain relaxation
Tuning
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Summary:Monolithically integrating multi-color pixels from a standard InGaN quantum well active region was demonstrated with a wavelength tuning range of 178 nm. Nanopillar structures were fabricated to enable the wavelength tuning. Strain induced wavelength shift was investigated both experimentally and theoretically. A simple one-dimensional strain relaxation model was shown to accurately predict the wavelength shift as a function of the nanopillar diameter. The strain relaxation was found to depend on the indium composition in the quantum well. No noticeable increase of the defect density was observed after the strain relaxation process.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4942190