Anisotropic transport properties of quasiballistic InAs nanowires under high magnetic field

The magnetoconductance of a long channel InAs nanowire based field effect transistor in the quasiballistic regime under large magnetic field is investigated. The quasi-1D nanowire is fully characterized by a bias voltage spectroscopy and measurements under magnetic field up to 50 T applied either pe...

Full description

Saved in:
Bibliographic Details
Published in:Physical review. B 2018-03, Vol.97 (12), Article 125308
Main Authors: Vigneau, Florian, Zeng, Zaiping, Escoffier, Walter, Caroff, Philippe, Leturcq, Renaud, Niquet, Yann-Michel, Raquet, Bertrand, Goiran, Michel
Format: Article
Language:English
Subjects:
Angular momentum
Backscattering
Cyclotrons
Field effect transistors
Magnetic fields
Magnetic properties
Magnetism
Nanowires
Resistance
Semiconductor devices
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The magnetoconductance of a long channel InAs nanowire based field effect transistor in the quasiballistic regime under large magnetic field is investigated. The quasi-1D nanowire is fully characterized by a bias voltage spectroscopy and measurements under magnetic field up to 50 T applied either perpendicular or parallel to the nanowire axis lifting the spin and orbital degeneracies of the subbands. Under normal magnetic field, the conductance shows quantized steps due to the backscattering reduction and a decrease due to depopulation of the 1D modes. Under axial magnetic field, a quasioscillatory behavior is evidenced due to the coupling of the magnetic field with the angular momentum of the wave function. In addition the formation of cyclotron orbits is highlighted under high magnetic field. The experimental results are compared with theoretical calculation of the 1D band structure and related parameters.
ISSN:2469-9950
2469-9969
DOI:10.1103/PhysRevB.97.125308