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Contributions of oxygen vacancies and titanium interstitials to band-gap states of reduced titania

The spectroscopic fingerprints of the point defects of titanium dioxide remain highly controversial. Seemingly indisputable experiments lead to conflicting conclusions in which oxygen vacancies and titanium interstitials are alternately referred to as the primary origin of the Ti 3d band-gap states....

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Bibliographic Details
Published in:Physical review. B 2018-01, Vol.97 (4), Article 041403
Main Authors: Li, Jingfeng, Lazzari, Rémi, Chenot, Stéphane, Jupille, Jacques
Format: Article
Language:English
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Summary:The spectroscopic fingerprints of the point defects of titanium dioxide remain highly controversial. Seemingly indisputable experiments lead to conflicting conclusions in which oxygen vacancies and titanium interstitials are alternately referred to as the primary origin of the Ti 3d band-gap states. We report on experiments performed by electron energy loss spectroscopy whose key is the direct annealing of only the very surface of rutile TiO2(110) crystals and the simultaneous measurement of its temperature via the Bose-Einstein loss/gain ratio. By surface preparations involving reactions with oxygen and water vapor, in particular, under electron irradiation, vacancy- and interstitial-related band-gap states are singled out. Off-specular measurements reveal that both types of defects contribute to a unique charge distribution that peaks in subsurface layers with a common dispersive behavior.
ISSN:2469-9950
2469-9969
DOI:10.1103/PhysRevB.97.041403