Relativistic nature of carriers: Origin of electron-hole conduction asymmetry in monolayer graphene

We report electron-hole conduction asymmetry in monolayer graphene. Previously, it has been claimed that electron-hole conduction asymmetry is due to imbalanced carrier injection from metallic electrodes. Here, we show that metallic contacts have negligible impact on asymmetric conduction and may be...

Full description

Saved in:
Bibliographic Details
Published in:Physical review. B 2017-12, Vol.96 (24), Article 241407
Main Authors: Srivastava, Pawan Kumar, Arya, Swasti, Kumar, Santosh, Ghosh, Subhasis
Format: Article
Language:English
Subjects:
Asymmetry
Carrier injection
Current carriers
Electric contacts
Electrical measurement
Electrons
Graphene
Holes (electron deficiencies)
Monolayers
Quantum theory
Relativism
Relativistic effects
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We report electron-hole conduction asymmetry in monolayer graphene. Previously, it has been claimed that electron-hole conduction asymmetry is due to imbalanced carrier injection from metallic electrodes. Here, we show that metallic contacts have negligible impact on asymmetric conduction and may be either sample or device-dependent phenomena. Electrical measurements show that monolayer graphene based devices exhibit suppressed electron conduction compared to hole conduction due to the presence of donor impurities which scatter electrons more efficiently. This can be explained by the relativistic nature of charge carriers in a graphene monolayer and can be reconciled with the fact that in a relativistic quantum system transport cross section does depend on the sign of scattering potential in contrast to a nonrelativistic quantum system.
ISSN:2469-9950
2469-9969
DOI:10.1103/PhysRevB.96.241407