Proximity-induced superconductivity within the InAs/GaSb edge conducting state

We experimentally investigate Andreev transport through the interface between an indium superconductor and the edge of the InAs/GaSb bilayer. To cover all possible regimes of the InAs/GaSb spectrum, we study samples with 10-nm-, 12-nm-, and 14-nm-thick InAs quantum wells. For the trivial case of a d...

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Bibliographic Details
Published in:Physical review. B 2017-12, Vol.96 (24), Article 245304
Main Authors: Kononov, A., Kostarev, V. A., Semyagin, B. R., Preobrazhenskii, V. V., Putyato, M. A., Emelyanov, E. A., Deviatov, E. V.
Format: Article
Language:English
Subjects:
Gallium antimonides
Quantum wells
Superconductivity
Variations
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Summary:We experimentally investigate Andreev transport through the interface between an indium superconductor and the edge of the InAs/GaSb bilayer. To cover all possible regimes of the InAs/GaSb spectrum, we study samples with 10-nm-, 12-nm-, and 14-nm-thick InAs quantum wells. For the trivial case of a direct band insulator in 10 nm samples, differential resistance demonstrates standard Andreev reflection. For InAs/GaSb structures with band inversion (12 and 14 nm samples), we observe distinct low-energy structures, which we regard as direct evidence for the proximity-induced superconductivity within the current-carrying edge state. For 14 nm InAs well samples, we additionally observe mesoscopiclike resistance fluctuations, which are subjected to threshold suppression in low magnetic fields.
ISSN:2469-9950
2469-9969
DOI:10.1103/PhysRevB.96.245304