Demonstration of solar-blind AlxGa1−xN-based heterojunction phototransistors

Al0.4Ga0.6N/Al0.65Ga0.35N heterojunction phototransistors have been fabricated from the epi-structure grown by low-pressure metal organic chemical vapor deposition on c-plane sapphire substrates. P-type conductivity of the AlGaN base layer was realized by using indium surfactant-assisted Mg-delta do...

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Bibliographic Details
Published in:Applied physics letters 2015-12, Vol.107 (23)
Main Authors: Zhang, Lingxia, Tang, Shaoji, Liu, Changshan, Li, Bin, Wu, Hualong, Wang, Hailong, Wu, Zhisheng, Jiang, Hao
Format: Article
Language:English
Subjects:
Applied physics
Bandpass
Bias
Dark current
Emitters
Heterojunctions
Metalorganic chemical vapor deposition
Organic chemicals
Organic chemistry
Phototransistors
Sapphire
Spectral sensitivity
Substrates
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Summary:Al0.4Ga0.6N/Al0.65Ga0.35N heterojunction phototransistors have been fabricated from the epi-structure grown by low-pressure metal organic chemical vapor deposition on c-plane sapphire substrates. P-type conductivity of the AlGaN base layer was realized by using indium surfactant-assisted Mg-delta doping method. Regrowth technique was used to suppress the Mg memory effect on the n-type emitter. The fabricated devices with a 150-μm-diameter active area exhibited a bandpass spectral response between 235 and 285 nm. Dark current was measured to be less than 10 pA for bias voltages below 2.0 V. A high optical gain of 1.9 × 103 was obtained at 6 V bias.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4937389