Band alignment of atomic layer deposited (HfZrO4) 1−x (SiO2) x gate dielectrics on Si (100)

The band alignment of atomic layer deposited (HfZrO4)1−x(SiO2)x (x = 0, 0.10, 0.15, and 0.20) gate dielectric thin films grown on Si (100) was obtained by using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap, valence band offset, and conduction band o...

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Bibliographic Details
Published in:Applied physics letters 2015-11, Vol.107 (18)
Main Authors: Heo, Sung, Tahir, Dahlang, Chung, Jae Gwan, Lee, Jae Cheol, Kim, KiHong, Lee, Junho, Lee, Hyung-Ik, Park, Gyeong Su, Oh, Suhk Kun, Kang, Hee Jae, Choi, Pyungho, Choi, Byoung-Deog
Format: Article
Language:English
Subjects:
Alignment
Applied physics
Conduction bands
Current leakage
Electron energy loss spectroscopy
Energy dissipation
Energy gap
Gates
Leakage current
Offsets
Semiconductor research
Silicon dioxide
Silicon substrates
Spectrum analysis
Thin films
Valence band
X ray reflection
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Summary:The band alignment of atomic layer deposited (HfZrO4)1−x(SiO2)x (x = 0, 0.10, 0.15, and 0.20) gate dielectric thin films grown on Si (100) was obtained by using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap, valence band offset, and conduction band offset values for HfZrO4 silicate increased from 5.4 eV to 5.8 eV, from 2.5 eV to 2.75 eV, and from 1.78 eV to 1.93 eV, respectively, as the mole fraction (x) of SiO2 increased from 0.1 to 0.2. This increase in the conduction band and valence band offsets, as a function of increasing SiO2 mole fraction, decreased the gate leakage current density. As a result, HfZrO4 silicate thin films were found to be better for advanced gate stack applications because they had adequate band gaps to ensure sufficient conduction band offsets and valence band offsets to Si.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4934567