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Porous silicon-VO2 based hybrids as possible optical temperature sensor: Wavelength-dependent optical switching from visible to near-infrared range
Morphological properties of thermochromic VO2—porous silicon based hybrids reveal the growth of well-crystalized nanometer-scale features of VO2 as compared with typical submicron granular structure obtained in thin films deposited on flat substrates. Structural characterization performed as a funct...
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Published in: | Journal of applied physics 2015-10, Vol.118 (13) |
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Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Morphological properties of thermochromic VO2—porous silicon based hybrids reveal the growth of well-crystalized nanometer-scale features of VO2 as compared with typical submicron granular structure obtained in thin films deposited on flat substrates. Structural characterization performed as a function of temperature via grazing incidence X-ray diffraction and micro-Raman demonstrate reversible semiconductor-metal transition of the hybrid, changing from a low-temperature monoclinic VO2(M) to a high-temperature tetragonal rutile VO2(R) crystalline structure, coupled with a decrease in phase transition temperature. Effective optical response studied in terms of red/blue shift of the reflectance spectra results in a wavelength-dependent optical switching with temperature. As compared to VO2 film over crystalline silicon substrate, the hybrid structure is found to demonstrate up to 3-fold increase in the change of reflectivity with temperature, an enlarged hysteresis loop and a wider operational window for its potential application as an optical temperature sensor. Such silicon based hybrids represent an exciting class of functional materials to display thermally triggered optical switching culminated by the characteristics of each of the constituent blocks as well as device compatibility with standard integrated circuit technology. |
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ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.4932023 |