Modeling, Simulation, Fabrication, and Characterization of a 10-[Formula Omitted]W/cm2 Class Si-Nanowire Thermoelectric Generator for IoT Applications

• Published in: IEEE transactions on electron devices 2018-01, Vol.65 (11), p.5180
• Main Authors: Tomita, Motohiro, Oba, Shunsuke, Himeda, Yuya, Yamato, Ryo, Shima, Keisuke, Kumada, Takehiro, Xu, Mao, Takezawa, Hiroki, Mesaki, Kohhei, Tsuda, Kazuaki, Hashimoto, Shuichiro, Zhan, Tianzhuo, Zhang, Hui, Kamakura, Yoshinari, Suzuki, Yuhhei, Inokawa, Hiroshi, Ikeda, Hiroya, Matsukawa, Takashi, Matsuki, Takeo, Watanabe, Takanobu
• Format: Article
• Language: English
• Subjects: CMOS; Computer simulation; Heat transmission; Internet of Things; Nanowires; Silicon substrates; Temperature gradients; Thermal resistance; Thermoelectric generators; Thermoelectricity
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2018.2867845

We propose a planar device architecture compatible with the CMOS process technology as the optimal current benchmark of a Si-nanowire (NW) thermoelectric (TE) power generator. The proposed device is driven by a temperature gradient that is formed in the proximity of a perpendicular heat flow to the substrate. Therefore, unlike the conventional TE generators, the planar short Si-NWs need not be suspended on a cavity structure. Under an externally applied temperature difference of 5 K, the recorded TE power density is observed to be [Formula Omitted]/cm2 by shortening the Si-NWs length and suppressing the parasitic thermal resistance of the Si substrate. The demonstration paves a pathway to develop cost-effective autonomous internet-of-things applications that utilize the environmental and body heats.