High-mobility and low-operating voltage organic thin film transistor with epoxy based siloxane binder as the gate dielectric

This paper reports the fabrication of pentacene-based organic thin-film transistors using a dielectric material, Dynasylan ®SIVO110. The devices exhibit excellent performance characterized by a low threshold voltage of −1.4 V (operating voltage: 0 to −4 V) together with a mobility of 1.9 cm2 V−1s−1....

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Bibliographic Details
Published in:Applied physics letters 2015-09, Vol.107 (10)
Main Authors: Tewari, Amit, Gandla, Srinivas, Pininti, Anil Reddy, Karuppasamy, K., Böhm, Siva, Bhattacharyya, Arup R., McNeill, Christopher R., Gupta, Dipti
Format: Article
Language:English
Subjects:
Applied physics
Dielectrics
Morphology
Semiconductor devices
Storage capacity
Thin film transistors
Threshold voltage
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Summary:This paper reports the fabrication of pentacene-based organic thin-film transistors using a dielectric material, Dynasylan ®SIVO110. The devices exhibit excellent performance characterized by a low threshold voltage of −1.4 V (operating voltage: 0 to −4 V) together with a mobility of 1.9 cm2 V−1s−1. These results are promising because it uses only a single layer of dielectric without performing any intermediate treatment. The reason is attributed to the high charge storage capacity of the dielectric (κ ∼ 20.02), a low interfacial trap density (2.56 × 1011cm−2), and favorable pentacene film morphology consisting of large and interconnected grains having an average size of 234 nm.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4930305