Thickness dependent charge transport in ferroelectric BaTiO3 heterojunctions

We have investigated the effect of ferroelectric barium titanate (BaTiO3) film thickness on the charge transport mechanism in pulsed laser deposited epitaxial metal–ferroelectric semiconductor junctions. The current (I)–voltage (V) measurements across the junctions comprising of 20–500 nm thick BaTi...

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Published in:Journal of applied physics 2015-09, Vol.118 (11)
Main Authors: Singh, Pooja, Rout, P. K., Singh, Manju, Rakshit, R. K., Dogra, Anjana
Format: Article
Language:English
Subjects:
Applied physics
Barium titanates
Buffer layers
Charge transport
Conduction bands
Ferroelectric materials
Ferroelectricity
Film thickness
Heterojunctions
Pulsed laser deposition
Pulsed lasers
Semiconductor junctions
Space charge
Strontium titanates
Substrates
Trapping
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description We have investigated the effect of ferroelectric barium titanate (BaTiO3) film thickness on the charge transport mechanism in pulsed laser deposited epitaxial metal–ferroelectric semiconductor junctions. The current (I)–voltage (V) measurements across the junctions comprising of 20–500 nm thick BaTiO3 and conducting bottom electrode (Nb: SrTiO3 substrate or La2/3Ca1/3MnO3 buffer layer) demonstrate the space charge limited conduction. Further analysis indicates a reduction in the ratio of free to trapped carriers with increasing thickness in spite of decreasing trap density. Such behaviour arises the deepening of the shallow trap levels (
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K. ; Singh, Manju ; Rakshit, R. K. ; Dogra, Anjana</creator><creatorcontrib>Singh, Pooja ; Rout, P. K. ; Singh, Manju ; Rakshit, R. K. ; Dogra, Anjana</creatorcontrib><description>We have investigated the effect of ferroelectric barium titanate (BaTiO3) film thickness on the charge transport mechanism in pulsed laser deposited epitaxial metal–ferroelectric semiconductor junctions. The current (I)–voltage (V) measurements across the junctions comprising of 20–500 nm thick BaTiO3 and conducting bottom electrode (Nb: SrTiO3 substrate or La2/3Ca1/3MnO3 buffer layer) demonstrate the space charge limited conduction. Further analysis indicates a reduction in the ratio of free to trapped carriers with increasing thickness in spite of decreasing trap density. Such behaviour arises the deepening of the shallow trap levels (&lt;0.65 eV) below conduction band with increasing thickness. 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source American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)
subjects Applied physics
Barium titanates
Buffer layers
Charge transport
Conduction bands
Ferroelectric materials
Ferroelectricity
Film thickness
Heterojunctions
Pulsed laser deposition
Pulsed lasers
Semiconductor junctions
Space charge
Strontium titanates
Substrates
Trapping
title Thickness dependent charge transport in ferroelectric BaTiO3 heterojunctions
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