Electronic structure of β- Ga2O3 single crystals investigated by hard X-ray photoelectron spectroscopy

By combination of hard X-ray photoelectron spectroscopy (HAXPES) and first-principles band structure calculations, the electronic states of β-Ga2O3 were investigated to deepen the understanding of bulk information for this compound. The valence band spectra of HAXPES presented the main contribution...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2015-07, Vol.107 (2)
Main Authors: Li, Guo-Ling, Zhang, Fabi, Cui, Yi-Tao, Oji, Hiroshi, Son, Jin-Young, Guo, Qixin
Format: Article
Language:English
Subjects:
Applied physics
Crystal structure
Electron states
Electronic structure
Electrons
First principles
Gallium oxides
Photoelectron spectroscopy
Photoionization
Single crystals
Spectrum analysis
Valence band
X ray photoelectron spectroscopy
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:By combination of hard X-ray photoelectron spectroscopy (HAXPES) and first-principles band structure calculations, the electronic states of β-Ga2O3 were investigated to deepen the understanding of bulk information for this compound. The valence band spectra of HAXPES presented the main contribution from Ga 4sp, which are well represented by photoionization cross section weighted partial density of states. The experimental data complemented with the theoretical study yield a realistic picture of the electronic structure for β-Ga2O3.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4926919