Epitaxial graphene thermistor for cryogenic temperatures

•Desorption/adsorption of atmospheric adsorbates influence the electrical conductivity and thermal sensitivity of graphene.•SiO2 encapsulated epitaxial graphene exhibits a strong NTC type thermistor behavior.•Transient thermal response of encapsulated epitaxial graphene is superior for the temperatu...

Full description

Saved in:
Bibliographic Details
Published in:Sensors and actuators. A. Physical. 2018-09, Vol.280, p.8-13
Main Authors: Kalkan, Sırrı Batuhan, Yiğen, Serap, Çelebi, Cem
Format: Article
Language:English
Subjects:
Adsorbates
Atomic layer epitaxy
Cryogenic temperature
Desorption
Encapsulation
Epitaxial graphene
Epitaxial growth
Graphene
Insulation
Low temperature physics
Low-temperature
NTC thermistor
Sensitivity analysis
Silicon carbide
Silicon substrates
Temperature dependence
Thermistors
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:•Desorption/adsorption of atmospheric adsorbates influence the electrical conductivity and thermal sensitivity of graphene.•SiO2 encapsulated epitaxial graphene exhibits a strong NTC type thermistor behavior.•Transient thermal response of encapsulated epitaxial graphene is superior for the temperatures below 225 K.•SiO2 encapsulated epitaxial graphene can be used readily as a thermistor element for cryogenic temperature measurements. The thermal responsivity of monolayer epitaxial graphene grown on the Si-face surface of semi-insulating SiC substrate is investigated as a function of temperature below 300 K. The measurements showed that adsorption/desorption of atmospheric adsorbates can randomly modify the electrical characteristics of graphene which is indeed undesirable for consistent temperature sensing operations. Therefore, in order to avoid the interaction between graphene layer and adsorbates, the grown graphene layer is encapsulated with a thin SiO2 film deposited by Pulsed Electron Deposition technique. Temperature dependent resistance measurement of encapsulated graphene exhibited a clear thermistor type behavior with negative temperature coefficient resistance character. Both the sensitivity and transient thermal responsivity of the SiO2/graphene/SiC sample were found to be enhanced greatly especially for the temperatures lower than 225 K. The experimentally obtained results suggest that SiO2 encapsulated epitaxial graphene on SiC can be used readily as an energy efficient and stable temperature sensing element in cryogenic applications.
ISSN:0924-4247
1873-3069
DOI:10.1016/j.sna.2018.07.028