High spectral selectivity for solar absorbers using a monolayer transparent conductive oxide coated on a metal substrate

• Published in: Journal of applied physics 2017-05, Vol.121 (18)
• Main Authors: Shimizu, Makoto, Suzuki, Mari, Iguchi, Fumitada, Yugami, Hiroo
• Format: Article
• Language: English
• Subjects: Absorptance; Absorption; Absorptivity; Applied physics; Carrier density; Cermets; Cut off wavelength; Diffusion barriers; Diffusion coatings; Diffusion effects; Diffusion layers; Emittance; Film thickness; Infrared analysis; Interlayers; Materials selection; Monolayers; Multilayers; Optical properties; Selectivity; Silicon dioxide; Solar energy absorbers; Substrates; Thermal stability
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.4983189

A spectrally selective absorber composed of a monolayer transparent conductive oxide (TCO) coated on a metal substrate is investigated for use in solar systems operating at temperatures higher (>973 K) than the operation temperature of conventional systems ( ∼ 673 K). This method is different from the currently used solar-selective coating technologies, such as those using multilayered and cermet materials. The spectral selective absorption property can be attributed to the inherent optical property of TCO owing to the plasma frequency and interferences between the substrates. Since spectral selectivity can be achieved using monolayered materials, the effect of atomic diffusion occurring at each layer boundary in a multilayer or cermet coatings under high-temperature conditions can be reduced. In addition, since this property is attributed to the inherent property of TCO, the precise control of the layer thickness can be omitted if the layer is sufficiently thick (>0.5 μm). The optimum TCO properties, namely, carrier density and mobility, required for solar-selective absorbers are analyzed to determine the cutoff wavelength and emittance in the infrared range. A solar absorptance of 0.95 and hemispherical emittance of 0.10 at 973 K are needed for achieving the optimum TCO properties, i.e., a carrier density of 5.5 × 1020 cm−3 and mobility of 90 cm2 V−1 s−1 are required. Optical simulations indicate that the spectrally selective absorption weakly depends on the incident angle and film thickness. The thermal stability of the fabricated absorber treated at temperatures up to 973 K for 10 h is verified in vacuum by introducing a SiO2 interlayer, which plays an important role as a diffusion barrier.