Probing the surface potential of oxidized silicon by assessing terahertz emission

Using laser terahertz emission microscopy, we measured laser-excited terahertz (THz) emission from silicon wafers with silicon-oxide passivation layers, revealing a strong correlation between the THz waveform and the surface potential. The surface potential was electrically tuned by a semitransparen...

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Bibliographic Details
Published in:Applied physics letters 2017-04, Vol.110 (16)
Main Authors: Mochizuki, Toshimitsu, Ito, Akira, Mitchell, Jonathon, Nakanishi, Hidetoshi, Tanahashi, Katsuto, Kawayama, Iwao, Tonouchi, Masayoshi, Shirasawa, Katsuhiko, Takato, Hidetaka
Format: Article
Language:English
Subjects:
Applied physics
Capacitance-voltage characteristics
Electric potential
Emission analysis
Emission microscopy
Lasers
Microscopy
Silicon
Silicon wafers
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Summary:Using laser terahertz emission microscopy, we measured laser-excited terahertz (THz) emission from silicon wafers with silicon-oxide passivation layers, revealing a strong correlation between the THz waveform and the surface potential. The surface potential was electrically tuned by a semitransparent top electrode disc and evaluated by measuring capacitance–voltage characteristics. The waveform changed with external bias and inverted near the flatband voltage, and changes appeared in the peak amplitude were similar to the capacitance–voltage characteristics. These results indicate that by analyzing the waveform of laser-excited THz emission generated by laser terahertz emission microscopy, we could quantitatively measure and map the internal field of surface band bending in semiconductors.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4980847