Self-powered narrowband p-NiO/n-ZnO nanowire ultraviolet photodetector with interface modification of Al2O3

All inorganic, self-powered, narrowband, and rapid response p-NiO/n-ZnO nanowire (NW) ultraviolet (UV) photodetectors were fabricated and investigated with Al2O3 as an interface modification layer. Al2O3 films grown by atomic layer deposition can greatly suppress the surface defects on ZnO NWs and i...

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Bibliographic Details
Published in:Applied physics letters 2017-03, Vol.110 (12)
Main Authors: Chen, Zhao, Li, Borui, Mo, Xiaoming, Li, Songzhan, Wen, Jian, Lei, Hongwei, Zhu, Ziqiang, Yang, Guang, Gui, Pengbin, Yao, Fang, Fang, Guojia
Format: Article
Language:English
Subjects:
Aluminum oxide
Applied physics
Atomic layer epitaxy
Nanowires
Narrowband
Nickel oxides
Photometers
Photovoltaic cells
Response time
Surface defects
Ultraviolet detectors
Ultraviolet radiation
Zinc oxide
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Summary:All inorganic, self-powered, narrowband, and rapid response p-NiO/n-ZnO nanowire (NW) ultraviolet (UV) photodetectors were fabricated and investigated with Al2O3 as an interface modification layer. Al2O3 films grown by atomic layer deposition can greatly suppress the surface defects on ZnO NWs and improve the p-NiO/n-ZnO NW interface. The photo-response of the photodetector in the 430–500 nm wavelength range was greatly inhibited and the full-width at half-maximum of the response spectrum was less than 30 nm. A large responsivity of 1.4 mA/W was achieved under a 380 nm UV irradiation (0.36 mW/cm2) at zero bias and the response time of the device was less than 0.04 s. Such a simple interface modification method might promote the developing of ZnO NW based narrowband photodetectors.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4978765