Electric field effect near the metal-insulator transition of atwo-dimensional electron system in SrTiO3

SmTiO3/SrTiO3 interfaces exhibit a two-dimensional electron systemwith carrierdensities in the order of 3 × 1014 cm−2 due to thepolar discontinuity at the interface. Here, electric field effect is used to investigate an electronsystem at this interface whose carrier density has been depleted substan...

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Bibliographic Details
Published in:Applied physics letters 2017-02, Vol.110 (6)
Main Authors: Ahadi Kaveh, Shoron, Omor F, Marshall, Patrick B, Mikheev Evgeny, Stemmer, Susanne
Format: Article
Language:English
Subjects:
Applied physics
Carrier density
Electric fields
Electric potential
Electrons
Insulators
Metal-insulator transition
Strontium titanates
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Summary:SmTiO3/SrTiO3 interfaces exhibit a two-dimensional electron systemwith carrierdensities in the order of 3 × 1014 cm−2 due to thepolar discontinuity at the interface. Here, electric field effect is used to investigate an electronsystem at this interface whose carrier density has been depleted substantially by the gatemetal and byreducing the thickness of the SmTiO3. At zero applied gate voltage, the sheetresistanceexceeds the quantum resistance,h/e2, by more than an order of magnitude, and theSrTiO3 channel is in the hopping transport regime. The electric field modulates thecarrier densityin the channel, which approaches the transition to a metal at positive gate bias.The channel resistances are found to scale by a single parameter that depends onthe gate voltage, similar to two-dimensional electron systems in high-qualitysemiconductors.
ISSN:0003-6951
1077-3118