Highly selective and responsive ultra-violet detection using an improved phototransistor

An ultra-violet (UV) phototransistor with 700 × 200 μm2 gate area decorated with vertically aligned Zinc Oxide (ZnO) nanorods to enhance UV responsivity is designed and manufactured. Spectral responsivity of the device was measured for wavelengths ranged from 200 to 1100 nm of the electromagnetic sp...

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Bibliographic Details
Published in:Applied physics letters 2015-06, Vol.106 (23)
Main Authors: Soleimanzadeh, Reza, Kolahdouz, Mohammadreza, Charsooghi, Mohammad A., Kolahdouz, Zahra, Zhang, Kouchi
Format: Article
Language:English
Subjects:
Applied physics
Nanorods
Oxygen plasma
Ultraviolet radiation
Zinc oxide
Zinc oxides
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Summary:An ultra-violet (UV) phototransistor with 700 × 200 μm2 gate area decorated with vertically aligned Zinc Oxide (ZnO) nanorods to enhance UV responsivity is designed and manufactured. Spectral responsivity of the device was measured for wavelengths ranged from 200 to 1100 nm of the electromagnetic spectrum in different transistor working regions. The best responsivity was achieved at sub-threshold and very weak inversion region. In order to enhance UV range selectivity, oxygen plasma has been employed on the nanorods, and consequently, nearly 3-fold improvement in its relative sensitivity at 375 nm was achieved. The final manufactured phototransistor shows a highly selective response of 24 kA/W in the UV range.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4922638