On the structural origins of ferroelectricity in HfO2 thin films

Here, we present a structural study on the origin of ferroelectricity in Gd doped HfO2 thin films. We apply aberration corrected high-angle annular dark-field scanning transmission electron microscopy to directly determine the underlying lattice type using projected atom positions and measured latti...

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Bibliographic Details
Published in:Applied physics letters 2015-04, Vol.106 (16)
Main Authors: Sang, Xiahan, Grimley, Everett D., Schenk, Tony, Schroeder, Uwe, LeBeau, James M.
Format: Article
Language:English
Subjects:
Applied physics
Electron diffraction
Electrons
Ferroelectricity
Gadolinium
Hafnium oxide
Lattice parameters
Orthorhombic phase
Scanning electron microscopy
Scanning transmission electron microscopy
Thin films
Transmission electron microscopy
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Summary:Here, we present a structural study on the origin of ferroelectricity in Gd doped HfO2 thin films. We apply aberration corrected high-angle annular dark-field scanning transmission electron microscopy to directly determine the underlying lattice type using projected atom positions and measured lattice parameters. Furthermore, we apply nanoscale electron diffraction methods to visualize the crystal symmetry elements. Combined, the experimental results provide unambiguous evidence for the existence of a non-centrosymmetric orthorhombic phase that can support spontaneous polarization, resolving the origin of ferroelectricity in HfO2 thin films.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4919135