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On the structural origins of ferroelectricity in HfO2 thin films

Here, we present a structural study on the origin of ferroelectricity in Gd doped HfO2 thin films. We apply aberration corrected high-angle annular dark-field scanning transmission electron microscopy to directly determine the underlying lattice type using projected atom positions and measured latti...

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Published in:Applied physics letters 2015-04, Vol.106 (16)
Main Authors: Sang, Xiahan, Grimley, Everett D., Schenk, Tony, Schroeder, Uwe, LeBeau, James M.
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Language:English
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cited_by cdi_FETCH-LOGICAL-c323t-b74232bb52ba22bb40c3a608c8e897e6a57895b8b58d6c217ff461c43915f4723
cites cdi_FETCH-LOGICAL-c323t-b74232bb52ba22bb40c3a608c8e897e6a57895b8b58d6c217ff461c43915f4723
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container_issue 16
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container_title Applied physics letters
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creator Sang, Xiahan
Grimley, Everett D.
Schenk, Tony
Schroeder, Uwe
LeBeau, James M.
description Here, we present a structural study on the origin of ferroelectricity in Gd doped HfO2 thin films. We apply aberration corrected high-angle annular dark-field scanning transmission electron microscopy to directly determine the underlying lattice type using projected atom positions and measured lattice parameters. Furthermore, we apply nanoscale electron diffraction methods to visualize the crystal symmetry elements. Combined, the experimental results provide unambiguous evidence for the existence of a non-centrosymmetric orthorhombic phase that can support spontaneous polarization, resolving the origin of ferroelectricity in HfO2 thin films.
doi_str_mv 10.1063/1.4919135
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2124816241</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2124816241</sourcerecordid><originalsourceid>FETCH-LOGICAL-c323t-b74232bb52ba22bb40c3a608c8e897e6a57895b8b58d6c217ff461c43915f4723</originalsourceid><addsrcrecordid>eNotUEtLAzEYDKJgrR78BwFPHrbmy5fX3pRirVDoRc9hNyaast2tSfbQf-9Ke5oZmAcMIffAFsAUPsFC1FADygsyA6Z1hQDmkswYY1ipWsI1ucl5N0nJEWfkedvT8uNpLml0ZUxNR4cUv2Of6RBo8CkNvvOupOhiOdLY03XY8ikysRC7fb4lV6Hpsr8745x8rl4_lutqs317X75sKoccS9VqwZG3reRtwycUzGGjmHHGm1p71UhtatmaVpov5TjoEIQCJ7AGGYTmOCcPp95DGn5Hn4vdDWPqp0nLgQsDiguYXI8nl0tDzskHe0hx36SjBWb_D7JgzwfhH7eBVco</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2124816241</pqid></control><display><type>article</type><title>On the structural origins of ferroelectricity in HfO2 thin films</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><source>AIP - American Institute of Physics</source><creator>Sang, Xiahan ; Grimley, Everett D. ; Schenk, Tony ; Schroeder, Uwe ; LeBeau, James M.</creator><creatorcontrib>Sang, Xiahan ; Grimley, Everett D. ; Schenk, Tony ; Schroeder, Uwe ; LeBeau, James M.</creatorcontrib><description>Here, we present a structural study on the origin of ferroelectricity in Gd doped HfO2 thin films. We apply aberration corrected high-angle annular dark-field scanning transmission electron microscopy to directly determine the underlying lattice type using projected atom positions and measured lattice parameters. Furthermore, we apply nanoscale electron diffraction methods to visualize the crystal symmetry elements. Combined, the experimental results provide unambiguous evidence for the existence of a non-centrosymmetric orthorhombic phase that can support spontaneous polarization, resolving the origin of ferroelectricity in HfO2 thin films.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4919135</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Electron diffraction ; Electrons ; Ferroelectricity ; Gadolinium ; Hafnium oxide ; Lattice parameters ; Orthorhombic phase ; Scanning electron microscopy ; Scanning transmission electron microscopy ; Thin films ; Transmission electron microscopy</subject><ispartof>Applied physics letters, 2015-04, Vol.106 (16)</ispartof><rights>2015 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c323t-b74232bb52ba22bb40c3a608c8e897e6a57895b8b58d6c217ff461c43915f4723</citedby><cites>FETCH-LOGICAL-c323t-b74232bb52ba22bb40c3a608c8e897e6a57895b8b58d6c217ff461c43915f4723</cites><orcidid>0000-0003-2933-1076</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,782,784,27923,27924</link.rule.ids></links><search><creatorcontrib>Sang, Xiahan</creatorcontrib><creatorcontrib>Grimley, Everett D.</creatorcontrib><creatorcontrib>Schenk, Tony</creatorcontrib><creatorcontrib>Schroeder, Uwe</creatorcontrib><creatorcontrib>LeBeau, James M.</creatorcontrib><title>On the structural origins of ferroelectricity in HfO2 thin films</title><title>Applied physics letters</title><description>Here, we present a structural study on the origin of ferroelectricity in Gd doped HfO2 thin films. We apply aberration corrected high-angle annular dark-field scanning transmission electron microscopy to directly determine the underlying lattice type using projected atom positions and measured lattice parameters. Furthermore, we apply nanoscale electron diffraction methods to visualize the crystal symmetry elements. Combined, the experimental results provide unambiguous evidence for the existence of a non-centrosymmetric orthorhombic phase that can support spontaneous polarization, resolving the origin of ferroelectricity in HfO2 thin films.</description><subject>Applied physics</subject><subject>Electron diffraction</subject><subject>Electrons</subject><subject>Ferroelectricity</subject><subject>Gadolinium</subject><subject>Hafnium oxide</subject><subject>Lattice parameters</subject><subject>Orthorhombic phase</subject><subject>Scanning electron microscopy</subject><subject>Scanning transmission electron microscopy</subject><subject>Thin films</subject><subject>Transmission electron microscopy</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNotUEtLAzEYDKJgrR78BwFPHrbmy5fX3pRirVDoRc9hNyaast2tSfbQf-9Ke5oZmAcMIffAFsAUPsFC1FADygsyA6Z1hQDmkswYY1ipWsI1ucl5N0nJEWfkedvT8uNpLml0ZUxNR4cUv2Of6RBo8CkNvvOupOhiOdLY03XY8ikysRC7fb4lV6Hpsr8745x8rl4_lutqs317X75sKoccS9VqwZG3reRtwycUzGGjmHHGm1p71UhtatmaVpov5TjoEIQCJ7AGGYTmOCcPp95DGn5Hn4vdDWPqp0nLgQsDiguYXI8nl0tDzskHe0hx36SjBWb_D7JgzwfhH7eBVco</recordid><startdate>20150420</startdate><enddate>20150420</enddate><creator>Sang, Xiahan</creator><creator>Grimley, Everett D.</creator><creator>Schenk, Tony</creator><creator>Schroeder, Uwe</creator><creator>LeBeau, James M.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-2933-1076</orcidid></search><sort><creationdate>20150420</creationdate><title>On the structural origins of ferroelectricity in HfO2 thin films</title><author>Sang, Xiahan ; Grimley, Everett D. ; Schenk, Tony ; Schroeder, Uwe ; LeBeau, James M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c323t-b74232bb52ba22bb40c3a608c8e897e6a57895b8b58d6c217ff461c43915f4723</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Applied physics</topic><topic>Electron diffraction</topic><topic>Electrons</topic><topic>Ferroelectricity</topic><topic>Gadolinium</topic><topic>Hafnium oxide</topic><topic>Lattice parameters</topic><topic>Orthorhombic phase</topic><topic>Scanning electron microscopy</topic><topic>Scanning transmission electron microscopy</topic><topic>Thin films</topic><topic>Transmission electron microscopy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sang, Xiahan</creatorcontrib><creatorcontrib>Grimley, Everett D.</creatorcontrib><creatorcontrib>Schenk, Tony</creatorcontrib><creatorcontrib>Schroeder, Uwe</creatorcontrib><creatorcontrib>LeBeau, James M.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sang, Xiahan</au><au>Grimley, Everett D.</au><au>Schenk, Tony</au><au>Schroeder, Uwe</au><au>LeBeau, James M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>On the structural origins of ferroelectricity in HfO2 thin films</atitle><jtitle>Applied physics letters</jtitle><date>2015-04-20</date><risdate>2015</risdate><volume>106</volume><issue>16</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Here, we present a structural study on the origin of ferroelectricity in Gd doped HfO2 thin films. We apply aberration corrected high-angle annular dark-field scanning transmission electron microscopy to directly determine the underlying lattice type using projected atom positions and measured lattice parameters. Furthermore, we apply nanoscale electron diffraction methods to visualize the crystal symmetry elements. Combined, the experimental results provide unambiguous evidence for the existence of a non-centrosymmetric orthorhombic phase that can support spontaneous polarization, resolving the origin of ferroelectricity in HfO2 thin films.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4919135</doi><orcidid>https://orcid.org/0000-0003-2933-1076</orcidid></addata></record>
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source American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list); AIP - American Institute of Physics
subjects Applied physics
Electron diffraction
Electrons
Ferroelectricity
Gadolinium
Hafnium oxide
Lattice parameters
Orthorhombic phase
Scanning electron microscopy
Scanning transmission electron microscopy
Thin films
Transmission electron microscopy
title On the structural origins of ferroelectricity in HfO2 thin films
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-12T00%3A59%3A00IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=On%20the%20structural%20origins%20of%20ferroelectricity%20in%20HfO2%20thin%20films&rft.jtitle=Applied%20physics%20letters&rft.au=Sang,%20Xiahan&rft.date=2015-04-20&rft.volume=106&rft.issue=16&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.4919135&rft_dat=%3Cproquest_cross%3E2124816241%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c323t-b74232bb52ba22bb40c3a608c8e897e6a57895b8b58d6c217ff461c43915f4723%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2124816241&rft_id=info:pmid/&rfr_iscdi=true