Loading…
On the structural origins of ferroelectricity in HfO2 thin films
Here, we present a structural study on the origin of ferroelectricity in Gd doped HfO2 thin films. We apply aberration corrected high-angle annular dark-field scanning transmission electron microscopy to directly determine the underlying lattice type using projected atom positions and measured latti...
Saved in:
Published in: | Applied physics letters 2015-04, Vol.106 (16) |
---|---|
Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
cited_by | cdi_FETCH-LOGICAL-c323t-b74232bb52ba22bb40c3a608c8e897e6a57895b8b58d6c217ff461c43915f4723 |
---|---|
cites | cdi_FETCH-LOGICAL-c323t-b74232bb52ba22bb40c3a608c8e897e6a57895b8b58d6c217ff461c43915f4723 |
container_end_page | |
container_issue | 16 |
container_start_page | |
container_title | Applied physics letters |
container_volume | 106 |
creator | Sang, Xiahan Grimley, Everett D. Schenk, Tony Schroeder, Uwe LeBeau, James M. |
description | Here, we present a structural study on the origin of ferroelectricity in Gd doped HfO2 thin films. We apply aberration corrected high-angle annular dark-field scanning transmission electron microscopy to directly determine the underlying lattice type using projected atom positions and measured lattice parameters. Furthermore, we apply nanoscale electron diffraction methods to visualize the crystal symmetry elements. Combined, the experimental results provide unambiguous evidence for the existence of a non-centrosymmetric orthorhombic phase that can support spontaneous polarization, resolving the origin of ferroelectricity in HfO2 thin films. |
doi_str_mv | 10.1063/1.4919135 |
format | article |
fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2124816241</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2124816241</sourcerecordid><originalsourceid>FETCH-LOGICAL-c323t-b74232bb52ba22bb40c3a608c8e897e6a57895b8b58d6c217ff461c43915f4723</originalsourceid><addsrcrecordid>eNotUEtLAzEYDKJgrR78BwFPHrbmy5fX3pRirVDoRc9hNyaast2tSfbQf-9Ke5oZmAcMIffAFsAUPsFC1FADygsyA6Z1hQDmkswYY1ipWsI1ucl5N0nJEWfkedvT8uNpLml0ZUxNR4cUv2Of6RBo8CkNvvOupOhiOdLY03XY8ikysRC7fb4lV6Hpsr8745x8rl4_lutqs317X75sKoccS9VqwZG3reRtwycUzGGjmHHGm1p71UhtatmaVpov5TjoEIQCJ7AGGYTmOCcPp95DGn5Hn4vdDWPqp0nLgQsDiguYXI8nl0tDzskHe0hx36SjBWb_D7JgzwfhH7eBVco</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2124816241</pqid></control><display><type>article</type><title>On the structural origins of ferroelectricity in HfO2 thin films</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><source>AIP - American Institute of Physics</source><creator>Sang, Xiahan ; Grimley, Everett D. ; Schenk, Tony ; Schroeder, Uwe ; LeBeau, James M.</creator><creatorcontrib>Sang, Xiahan ; Grimley, Everett D. ; Schenk, Tony ; Schroeder, Uwe ; LeBeau, James M.</creatorcontrib><description>Here, we present a structural study on the origin of ferroelectricity in Gd doped HfO2 thin films. We apply aberration corrected high-angle annular dark-field scanning transmission electron microscopy to directly determine the underlying lattice type using projected atom positions and measured lattice parameters. Furthermore, we apply nanoscale electron diffraction methods to visualize the crystal symmetry elements. Combined, the experimental results provide unambiguous evidence for the existence of a non-centrosymmetric orthorhombic phase that can support spontaneous polarization, resolving the origin of ferroelectricity in HfO2 thin films.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4919135</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Electron diffraction ; Electrons ; Ferroelectricity ; Gadolinium ; Hafnium oxide ; Lattice parameters ; Orthorhombic phase ; Scanning electron microscopy ; Scanning transmission electron microscopy ; Thin films ; Transmission electron microscopy</subject><ispartof>Applied physics letters, 2015-04, Vol.106 (16)</ispartof><rights>2015 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c323t-b74232bb52ba22bb40c3a608c8e897e6a57895b8b58d6c217ff461c43915f4723</citedby><cites>FETCH-LOGICAL-c323t-b74232bb52ba22bb40c3a608c8e897e6a57895b8b58d6c217ff461c43915f4723</cites><orcidid>0000-0003-2933-1076</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,782,784,27923,27924</link.rule.ids></links><search><creatorcontrib>Sang, Xiahan</creatorcontrib><creatorcontrib>Grimley, Everett D.</creatorcontrib><creatorcontrib>Schenk, Tony</creatorcontrib><creatorcontrib>Schroeder, Uwe</creatorcontrib><creatorcontrib>LeBeau, James M.</creatorcontrib><title>On the structural origins of ferroelectricity in HfO2 thin films</title><title>Applied physics letters</title><description>Here, we present a structural study on the origin of ferroelectricity in Gd doped HfO2 thin films. We apply aberration corrected high-angle annular dark-field scanning transmission electron microscopy to directly determine the underlying lattice type using projected atom positions and measured lattice parameters. Furthermore, we apply nanoscale electron diffraction methods to visualize the crystal symmetry elements. Combined, the experimental results provide unambiguous evidence for the existence of a non-centrosymmetric orthorhombic phase that can support spontaneous polarization, resolving the origin of ferroelectricity in HfO2 thin films.</description><subject>Applied physics</subject><subject>Electron diffraction</subject><subject>Electrons</subject><subject>Ferroelectricity</subject><subject>Gadolinium</subject><subject>Hafnium oxide</subject><subject>Lattice parameters</subject><subject>Orthorhombic phase</subject><subject>Scanning electron microscopy</subject><subject>Scanning transmission electron microscopy</subject><subject>Thin films</subject><subject>Transmission electron microscopy</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNotUEtLAzEYDKJgrR78BwFPHrbmy5fX3pRirVDoRc9hNyaast2tSfbQf-9Ke5oZmAcMIffAFsAUPsFC1FADygsyA6Z1hQDmkswYY1ipWsI1ucl5N0nJEWfkedvT8uNpLml0ZUxNR4cUv2Of6RBo8CkNvvOupOhiOdLY03XY8ikysRC7fb4lV6Hpsr8745x8rl4_lutqs317X75sKoccS9VqwZG3reRtwycUzGGjmHHGm1p71UhtatmaVpov5TjoEIQCJ7AGGYTmOCcPp95DGn5Hn4vdDWPqp0nLgQsDiguYXI8nl0tDzskHe0hx36SjBWb_D7JgzwfhH7eBVco</recordid><startdate>20150420</startdate><enddate>20150420</enddate><creator>Sang, Xiahan</creator><creator>Grimley, Everett D.</creator><creator>Schenk, Tony</creator><creator>Schroeder, Uwe</creator><creator>LeBeau, James M.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-2933-1076</orcidid></search><sort><creationdate>20150420</creationdate><title>On the structural origins of ferroelectricity in HfO2 thin films</title><author>Sang, Xiahan ; Grimley, Everett D. ; Schenk, Tony ; Schroeder, Uwe ; LeBeau, James M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c323t-b74232bb52ba22bb40c3a608c8e897e6a57895b8b58d6c217ff461c43915f4723</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Applied physics</topic><topic>Electron diffraction</topic><topic>Electrons</topic><topic>Ferroelectricity</topic><topic>Gadolinium</topic><topic>Hafnium oxide</topic><topic>Lattice parameters</topic><topic>Orthorhombic phase</topic><topic>Scanning electron microscopy</topic><topic>Scanning transmission electron microscopy</topic><topic>Thin films</topic><topic>Transmission electron microscopy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sang, Xiahan</creatorcontrib><creatorcontrib>Grimley, Everett D.</creatorcontrib><creatorcontrib>Schenk, Tony</creatorcontrib><creatorcontrib>Schroeder, Uwe</creatorcontrib><creatorcontrib>LeBeau, James M.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sang, Xiahan</au><au>Grimley, Everett D.</au><au>Schenk, Tony</au><au>Schroeder, Uwe</au><au>LeBeau, James M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>On the structural origins of ferroelectricity in HfO2 thin films</atitle><jtitle>Applied physics letters</jtitle><date>2015-04-20</date><risdate>2015</risdate><volume>106</volume><issue>16</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Here, we present a structural study on the origin of ferroelectricity in Gd doped HfO2 thin films. We apply aberration corrected high-angle annular dark-field scanning transmission electron microscopy to directly determine the underlying lattice type using projected atom positions and measured lattice parameters. Furthermore, we apply nanoscale electron diffraction methods to visualize the crystal symmetry elements. Combined, the experimental results provide unambiguous evidence for the existence of a non-centrosymmetric orthorhombic phase that can support spontaneous polarization, resolving the origin of ferroelectricity in HfO2 thin films.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4919135</doi><orcidid>https://orcid.org/0000-0003-2933-1076</orcidid></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0003-6951 |
ispartof | Applied physics letters, 2015-04, Vol.106 (16) |
issn | 0003-6951 1077-3118 |
language | eng |
recordid | cdi_proquest_journals_2124816241 |
source | American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list); AIP - American Institute of Physics |
subjects | Applied physics Electron diffraction Electrons Ferroelectricity Gadolinium Hafnium oxide Lattice parameters Orthorhombic phase Scanning electron microscopy Scanning transmission electron microscopy Thin films Transmission electron microscopy |
title | On the structural origins of ferroelectricity in HfO2 thin films |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-12T00%3A59%3A00IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=On%20the%20structural%20origins%20of%20ferroelectricity%20in%20HfO2%20thin%20films&rft.jtitle=Applied%20physics%20letters&rft.au=Sang,%20Xiahan&rft.date=2015-04-20&rft.volume=106&rft.issue=16&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.4919135&rft_dat=%3Cproquest_cross%3E2124816241%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c323t-b74232bb52ba22bb40c3a608c8e897e6a57895b8b58d6c217ff461c43915f4723%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2124816241&rft_id=info:pmid/&rfr_iscdi=true |