Gate-tunable high mobility remote-doped InSb/In1−xAlxSb quantum well heterostructures

Gate-tunable high-mobility InSb/In1−xAlxSb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200 000 cm2/V s is measured at T = 1.8 K. In asymmetrically remote-doped samples with an HfO2 gate dielectric formed by atomi...

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Bibliographic Details
Published in:Applied physics letters 2015-04, Vol.106 (14)
Main Authors: Yi, Wei, Kiselev, Andrey A., Thorp, Jacob, Noah, Ramsey, Nguyen, Binh-Minh, Bui, Steven, Rajavel, Rajesh D., Hussain, Tahir, Gyure, Mark F., Kratz, Philip, Qian, Qi, Manfra, Michael J., Pribiag, Vlad S., Kouwenhoven, Leo P., Marcus, Charles M., Sokolich, Marko
Format: Article
Language:English
Subjects:
Applied physics
Atomic layer epitaxy
Contact resistance
Electron density
Electron gas
Electrons
Hafnium oxide
Heterostructures
Indium antimonide
Intermetallic compounds
Quantum Hall effect
Quantum wells
Substrates
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Summary:Gate-tunable high-mobility InSb/In1−xAlxSb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200 000 cm2/V s is measured at T = 1.8 K. In asymmetrically remote-doped samples with an HfO2 gate dielectric formed by atomic layer deposition, parallel conduction is eliminated and complete 2DEG channel depletion is reached with minimal hysteresis in gate bias response of the 2DEG electron density. The integer quantum Hall effect with Landau level filling factor down to 1 is observed. A high-transparency non-alloyed Ohmic contact to the 2DEG with contact resistance below 1 Ω·mm is achieved at 1.8 K.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4917027