Effect of MgO thickness and bias voltage polarity on frequency response of tunneling magnetoresistance sensors with perpendicular anisotropy

We investigate the frequency response of CoFeB/MgO/CoFeB based tunneling magnetoresistance sensors with the perpendicular anisotropy. The 3 dB cut-off frequency (f3dB) strongly and non-monotonically depends on resistance-area product (RA), which is controlled by MgO thickness. Both high and low RA s...

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Bibliographic Details
Published in:Journal of applied physics 2015-05, Vol.117 (17)
Main Authors: Dabek, M., Wisniowski, P.
Format: Article
Language:English
Subjects:
Anisotropy
Bandwidths
Bias
Electric potential
Electronics
Frequency response
Magnesium oxide
Magnetoresistance
Magnetoresistivity
Polarity
Sensors
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Summary:We investigate the frequency response of CoFeB/MgO/CoFeB based tunneling magnetoresistance sensors with the perpendicular anisotropy. The 3 dB cut-off frequency (f3dB) strongly and non-monotonically depends on resistance-area product (RA), which is controlled by MgO thickness. Both high and low RA sensors achieved wide frequency bandwidth; however, we observed a maximum f3dB of 45 MHz at around 20 kΩ μm2. The bandwidth of the sensors increases with bias voltage of both polarity and is higher under positive polarity. This opens possibilities of using the sensors for high-speed magnetic field sensing and for improving their bandwidth by tuning RA and the bias.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4915104