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Highly crystalline MoS2 thin films grown by pulsed laser deposition

Highly crystalline thin films of MoS2 were prepared over large area by pulsed laser deposition down to a single monolayer on Al2O3 (0001), GaN (0001), and SiC-6H (0001) substrates. X-ray diffraction and selected area electron diffraction studies show that the films are quasi-epitaxial with good out-...

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Bibliographic Details
Published in:Applied physics letters 2015-02, Vol.106 (5)
Main Authors: Serrao, Claudy R., Diamond, Anthony M., Hsu, Shang-Lin, You, Long, Gadgil, Sushant, Clarkson, James, Carraro, Carlo, Maboudian, Roya, Hu, Chenming, Salahuddin, Sayeef
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Language:English
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Summary:Highly crystalline thin films of MoS2 were prepared over large area by pulsed laser deposition down to a single monolayer on Al2O3 (0001), GaN (0001), and SiC-6H (0001) substrates. X-ray diffraction and selected area electron diffraction studies show that the films are quasi-epitaxial with good out-of-plane texture. In addition, the thin films were observed to be highly crystalline with rocking curve full width half maxima of 0.01°, smooth with a RMS roughness of 0.27 nm, and uniform in thickness based on Raman spectroscopy. From transport measurements, the as-grown films were found to be p-type.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4907169