Performance stability and functional reliability in bipolar resistive switching of bilayer ceria based resistive random access memory devices

Memory devices based on Ti/CeO2-x:CeO2/ITO stacks with bilayer structure fabricated by rf-magnetron sputtering demonstrate promising bipolar resistive switching behavior with relatively low-voltage operation and small distribution of switching parameters. These devices show much reliable repeatabili...

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Bibliographic Details
Published in:Journal of applied physics 2015-02, Vol.117 (8)
Main Authors: Ismail, Muhammad, Talib, Ijaz, Rana, Anwar Manzoor, Ahmed, Ejaz, Nadeem, Muhammad Younus
Format: Article
Language:English
Subjects:
Applied physics
Cerium oxides
Crystal defects
Endurance
Grain boundaries
High resistance
Magnetron sputtering
Memory devices
Parameters
Random access memory
Switching
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Summary:Memory devices based on Ti/CeO2-x:CeO2/ITO stacks with bilayer structure fabricated by rf-magnetron sputtering demonstrate promising bipolar resistive switching behavior with relatively low-voltage operation and small distribution of switching parameters. These devices show much reliable repeatability and good endurance (>104 switching cycles) without any significant degradation in their performance. The cycle-to-cycle and device-to-device distribution of resistance switching parameters, such as resistances in the low and high resistance states, set and reset voltages have been investigated and discussed. Resistive switching behavior in our devices has been proposed to originate from the electric field induced drift of defects (specifically oxygen vacancies) preferably along grain boundaries in the bilayer structure of active dielectric layer.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4913504