Understanding short channel mobility degradation by accurate external resistance decomposition and intrinsic mobility extraction

An intrinsic short channel mobility extraction method is proposed by measuring two short-channel devices with different channel lengths and the same source/drain and contact geometry. The constant and dynamic components of external resistance are separated. Short-channel mobility degradation is obse...

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Bibliographic Details
Published in:Journal of applied physics 2015-02, Vol.117 (6)
Main Authors: Chu, Tao, Vega, Reinaldo A., Alptekin, Emre, Guo, Dechao, Shang, Huiling
Format: Article
Language:English
Subjects:
Applied physics
Degradation
Measuring instruments
Temperature dependence
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Summary:An intrinsic short channel mobility extraction method is proposed by measuring two short-channel devices with different channel lengths and the same source/drain and contact geometry. The constant and dynamic components of external resistance are separated. Short-channel mobility degradation is observed and its origin is studied. The possible causes of the halo doping and the non-uniformity of the inversion layer charge are accounted for. The weaker temperature dependence of short channel devices indicates that the short channel mobility degradation may result from some combination of defect-induced and Coulomb-induced scattering near the S/D regions, differing in severity between NFETs and PFETs which employ, respectively, ion implant and embedded epitaxy as the primary component of S/D design.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4908111