Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese

The magnetic moment and magnetization in GaAs/Ga0.84In0.16As/GaAs heterostructures with Mn diluted in GaAs cover layers and with atomically controlled Mn δ-layer thicknesses near GaInAs-quantum well (∼3 nm) in temperature range T = 1.8–300 K in magnetic field up to 50 kOe have been investigated. The...

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Bibliographic Details
Published in:Low temperature physics (Woodbury, N.Y.) N.Y.), 2015-02, Vol.41 (2), p.157-159
Main Authors: Charikova, T., Okulov, V., Gubkin, A., Lugovikh, A., Moiseev, K., Nevedomsky, V., Kudriavtsev, Yu, Gallardo, S., Lopez, M.
Format: Article
Language:English
Subjects:
Depletion
Ferromagnetism
Gallium arsenide
Heterostructures
Indium gallium arsenides
Magnetic fields
Magnetic moments
Magnetism
Magnetization
Manganese
Quantum wells
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Summary:The magnetic moment and magnetization in GaAs/Ga0.84In0.16As/GaAs heterostructures with Mn diluted in GaAs cover layers and with atomically controlled Mn δ-layer thicknesses near GaInAs-quantum well (∼3 nm) in temperature range T = 1.8–300 K in magnetic field up to 50 kOe have been investigated. The mass magnetization all of the samples of GaAs/Ga0.84In0.16As/GaAs with Mn increases with the increasing of the magnetic field that pointed out on the presence of low-dimensional ferromagnetism in the manganese depletion layer of GaAs based structures. It has been estimated the manganese content threshold at which the ferromagnetic ordering was found.
ISSN:1063-777X
1090-6517
DOI:10.1063/1.4906539