Grown-in defects limiting the bulk lifetime of p -type float-zone silicon wafers

We investigate a recombination active grown-in defect limiting the bulk lifetime (τbulk) of high quality float-zone (FZ) p-type silicon wafers. After annealing the samples at temperatures between 80 °C and 400 °C, τbulk was found to increase from ∼500 μs to ∼1.5 ms. By isochronal annealing the p-typ...

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Bibliographic Details
Published in:Journal of applied physics 2015-02, Vol.117 (5)
Main Authors: Grant, N. E., Rougieux, F. E., Macdonald, D., Bullock, J., Wan, Y.
Format: Article
Language:English
Subjects:
Annealing
Applied physics
Constraining
Defects
Diffusion rate
Gettering
Impurities
Silicon
Silicon wafers
Wafers
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Summary:We investigate a recombination active grown-in defect limiting the bulk lifetime (τbulk) of high quality float-zone (FZ) p-type silicon wafers. After annealing the samples at temperatures between 80 °C and 400 °C, τbulk was found to increase from ∼500 μs to ∼1.5 ms. By isochronal annealing the p-type samples between 80 °C and 400 °C for 30 min, the annihilation energy (Eann) of the defect was determined to be 0.3 
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4907804