Atomic layer deposition of crystalline SrHfO3 directly on Ge (001) for high- k dielectric applications

The current work explores the crystalline perovskite oxide, strontium hafnate, as a potential high-k gate dielectric for Ge-based transistors. SrHfO3 (SHO) is grown directly on Ge by atomic layer deposition and becomes crystalline with epitaxial registry after post-deposition vacuum annealing at ∼70...

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Bibliographic Details
Published in:Journal of applied physics 2015-02, Vol.117 (5)
Main Authors: McDaniel, Martin D., Hu, Chengqing, Lu, Sirong, Ngo, Thong Q., Posadas, Agham, Jiang, Aiting, Smith, David J., Yu, Edward T., Demkov, Alexander A., Ekerdt, John G.
Format: Article
Language:English
Subjects:
Applied physics
Atomic layer epitaxy
Crystal structure
Crystallinity
Dielectric properties
Interface reactions
Leakage current
Offsets
Perovskites
Semiconductor devices
Silicon
Strontium oxides
Transistors
Transmission electron microscopy
Vacuum annealing
X-ray diffraction
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Summary:The current work explores the crystalline perovskite oxide, strontium hafnate, as a potential high-k gate dielectric for Ge-based transistors. SrHfO3 (SHO) is grown directly on Ge by atomic layer deposition and becomes crystalline with epitaxial registry after post-deposition vacuum annealing at ∼700 °C for 5 min. The 2 × 1 reconstructed, clean Ge (001) surface is a necessary template to achieve crystalline films upon annealing. The SHO films exhibit excellent crystallinity, as shown by x-ray diffraction and transmission electron microscopy. The SHO films have favorable electronic properties for consideration as a high-k gate dielectric on Ge, with satisfactory band offsets (>2 eV), low leakage current (
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4906953