Synthesis, characterization of WS2 nanostructures by vapor phase deposition

Ultrathin two-dimensional WS2 nanostructures with various morphologies have been prepared on SiO2/Si (300 nm) and sapphire substrates by vapor phase deposition method. Simultaneously, tungsten nanostructures have also been obtained during the growth process. The nanostructures and morphologies of as...

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Bibliographic Details
Published in:Journal of applied physics 2015-02, Vol.117 (6)
Main Authors: Fan, Yinping, Li, Jun, Hao, Guolin, Luo, Siwei, Tang, Chao, Zhong, Jianxin
Format: Article
Language:English
Subjects:
Applied physics
Atomic force microscopy
Charge distribution
Deposition
Morphology
Nanostructure
Optoelectronics
Photoluminescence
Properties (attributes)
Quantum confinement
Raman spectroscopy
Sapphire
Silicon dioxide
Silicon substrates
Spectrum analysis
Thickness
Tungsten disulfide
Vapor phases
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Summary:Ultrathin two-dimensional WS2 nanostructures with various morphologies have been prepared on SiO2/Si (300 nm) and sapphire substrates by vapor phase deposition method. Simultaneously, tungsten nanostructures have also been obtained during the growth process. The nanostructures and morphologies of as-prepared products were systematically characterized by employing atomic force microscopy, Raman spectroscopy as well as scanning electron spectroscopy. The electrostatic properties of WS2 nanostructures were investigated exhibiting uniform surface potential and charge distributions. We have also detected the photoluminescence properties of WS2 nanostructures, which are dependent on the thickness and nanostructures of synthesized WS2. These results suggest that the optoelectronic properties of WS2 nanostructures can be effectively tuned by quantum confinement effect and nanostructures.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4907688