Synthesis, characterization of WS2 nanostructures by vapor phase deposition

• Published in: Journal of applied physics 2015-02, Vol.117 (6)
• Main Authors: Fan, Yinping, Li, Jun, Hao, Guolin, Luo, Siwei, Tang, Chao, Zhong, Jianxin
• Format: Article
• Language: English
• Subjects: Applied physics; Atomic force microscopy; Charge distribution; Deposition; Morphology; Nanostructure; Optoelectronics; Photoluminescence; Properties (attributes); Quantum confinement; Raman spectroscopy; Sapphire; Silicon dioxide; Silicon substrates; Spectrum analysis; Thickness; Tungsten disulfide; Vapor phases
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.4907688

Ultrathin two-dimensional WS2 nanostructures with various morphologies have been prepared on SiO2/Si (300 nm) and sapphire substrates by vapor phase deposition method. Simultaneously, tungsten nanostructures have also been obtained during the growth process. The nanostructures and morphologies of as-prepared products were systematically characterized by employing atomic force microscopy, Raman spectroscopy as well as scanning electron spectroscopy. The electrostatic properties of WS2 nanostructures were investigated exhibiting uniform surface potential and charge distributions. We have also detected the photoluminescence properties of WS2 nanostructures, which are dependent on the thickness and nanostructures of synthesized WS2. These results suggest that the optoelectronic properties of WS2 nanostructures can be effectively tuned by quantum confinement effect and nanostructures.