Determination of subcell I-V parameters by a pulsed suns-Voc method including optical coupling

The open circuit voltage of a single subcell in a multijunction cell stack can be measured with the help of pulsed, millisecond illumination. This concept makes use of the fact that the charging of the non-illuminated cell capacitances takes place on a much longer timescale than of the illuminated o...

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Bibliographic Details
Published in:Applied physics letters 2015-01, Vol.106 (2)
Main Authors: Nesswetter, H., Jost, N. R., Lugli, P., Bett, A. W., Zimmermann, C. G.
Format: Article
Language:English
Subjects:
Applied physics
Open circuit voltage
Optical coupling
Parameters
Photoelectric effect
Photoelectric emission
Short circuits
Volt-ampere characteristics
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Summary:The open circuit voltage of a single subcell in a multijunction cell stack can be measured with the help of pulsed, millisecond illumination. This concept makes use of the fact that the charging of the non-illuminated cell capacitances takes place on a much longer timescale than of the illuminated one. Optical coupling introduces a photocurrent in the subcell underneath. Its efficiency can be quantified in parallel under short circuit conditions. A suns-Voc approach, applied to this subcell pair, yields all relevant diode parameters. Applied to all subcells of a Ga0.50In0.50P/Ga0.99In0.01As/Ge triple junction cell, a very good match to the dark I-V curve is obtained.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4906237