Perpendicular magnetic anisotropy of amorphous [CoSiB/Pt]N thin films

Materials with perpendicular magnetic anisotropy (PMA) have been intensively studied for high-density nonvolatile memory such as spin-transfer-torque magnetic random access memory with low switching current density and high thermal stability. Compared with crystalline PMA multilayers, considerable w...

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Bibliographic Details
Published in:Journal of applied physics 2015-05, Vol.117 (17)
Main Authors: Kim, T. W., Choi, Y. H., Lee, K. J., Yoon, J. B., Cho, J. H., You, C.-Y., Jung, M. H.
Format: Article
Language:English
Subjects:
Amorphous materials
Creep (materials)
Domain walls
Magnetic anisotropy
Memory devices
Multilayers
Random access memory
Thermal stability
Thin films
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Summary:Materials with perpendicular magnetic anisotropy (PMA) have been intensively studied for high-density nonvolatile memory such as spin-transfer-torque magnetic random access memory with low switching current density and high thermal stability. Compared with crystalline PMA multilayers, considerable works have been done on amorphous PMA multilayers because the amorphous materials are expected to have lower pinning site density as well as smaller domain wall width. This study is an overview of the PMA properties of amorphous [CoSiB/Pt]N multilayers with varying N, where the energy contribution is changed from domain wall energy to magnetostatic energy around N = 6. By measuring the field-induced domain wall motion, we obtain the creep exponent of μ = 1/4. These results in the amorphous PMA multilayers of [CoSiB/Pt]N demonstrate possible potential as a free layer for PMA-based memory devices.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4906433