Bulk GaN flip-chip violet light-emitting diodes with optimized efficiency for high-power operation

We report on violet-emitting III-nitride light-emitting diodes (LEDs) grown on bulk GaN substrates employing a flip-chip architecture. Device performance is optimized for operation at high current density and high temperature, by specific design consideration for the epitaxial layers, extraction eff...

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Bibliographic Details
Published in:Applied physics letters 2015-01, Vol.106 (3)
Main Authors: Hurni, Christophe A., David, Aurelien, Cich, Michael J., Aldaz, Rafael I., Ellis, Bryan, Huang, Kevin, Tyagi, Anurag, DeLille, Remi A., Craven, Michael D., Steranka, Frank M., Krames, Michael R.
Format: Article
Language:English
Subjects:
Applied physics
Current density
Efficiency
Energy conversion efficiency
Epitaxial layers
Gallium nitrides
High current
Light emitting diodes
Low currents
Organic light emitting diodes
Substrates
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Summary:We report on violet-emitting III-nitride light-emitting diodes (LEDs) grown on bulk GaN substrates employing a flip-chip architecture. Device performance is optimized for operation at high current density and high temperature, by specific design consideration for the epitaxial layers, extraction efficiency, and electrical injection. The power conversion efficiency reaches a peak value of 84% at 85 °C and remains high at high current density, owing to low current-induced droop and low series resistance.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4905873