Extrinsic anomalous Hall effect in epitaxial Mn4N films

Anomalous Hall effect (AHE) in ferrimagnetic Mn4N epitaxial films grown by molecular-beam epitaxy is investigated. The longitudinal conductivity σxx is within the superclean regime, indicating Mn4N is a highly conducting material. We further demonstrate that the AHE signal in 40-nm-thick films is ma...

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Bibliographic Details
Published in:Applied physics letters 2015-01, Vol.106 (3)
Main Authors: Meng, M., Wu, S. X., Ren, L. Z., Zhou, W. Q., Wang, Y. J., Wang, G. L., Li, S. W.
Format: Article
Language:English
Subjects:
Applied physics
Electromagnetism
Epitaxial growth
Ferrimagnetism
Hall effect
Manganese
Molecular beam epitaxy
Thick films
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Summary:Anomalous Hall effect (AHE) in ferrimagnetic Mn4N epitaxial films grown by molecular-beam epitaxy is investigated. The longitudinal conductivity σxx is within the superclean regime, indicating Mn4N is a highly conducting material. We further demonstrate that the AHE signal in 40-nm-thick films is mainly due to the extrinsic contributions based on the analysis fitted by ρAH=a′ρxx0+bρxx2 and σAH∝σxx. Our study not only provide a strategy for further theoretical work on antiperovskite manganese nitrides but also shed promising light on utilizing their extrinsic AHE to fabricate spintronic devices.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4906420