High Frequency Extended Short-Wavelength Infrared Heterojunction Photodetectors Based on InAs/GaSb/AlSb Type-II Superlattices

InAs/GaSb/AlSb type-II superlattice-based photodetectors, with 50% cut-off wavelength of 2.1 μm and a -3 dB cut-off frequency of 4.8 GHz, are demonstrated, for 10 μm diameter circular mesas under 15 V applied reverse bias. A study of the cut-off frequency with applied bias and mesa size was performe...

Full description

Saved in:
Bibliographic Details
Published in:IEEE journal of quantum electronics 2018-12, Vol.54 (6), p.1-5
Main Authors: Chevallier, Romain, Haddadi, Abbas, McClintock, Ryan, Dehzangi, Arash, Lopez-Dominguez, Victor, Khalili Amiri, Pedram, Razeghi, Manijeh
Format: Article
Language:English
Subjects:
Bias
Cut off wavelength
Cutoff frequency
Frequency measurement
Heterojunctions
High frequencies
high frequency
Indium gallium arsenide
infrared photodetectors
Mesas
Photodetectors
Photometers
Semiconductor device measurement
Superlattices
telecommunications
Type-II superlattice
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:InAs/GaSb/AlSb type-II superlattice-based photodetectors, with 50% cut-off wavelength of 2.1 μm and a -3 dB cut-off frequency of 4.8 GHz, are demonstrated, for 10 μm diameter circular mesas under 15 V applied reverse bias. A study of the cut-off frequency with applied bias and mesa size was performed to evaluate some of the limiting factors of photodetectors high frequency performance.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2018.2871367