Phase stability, microstructure, and dielectric properties of quaternary oxides In12Ti10A2BO42 (A: Ga or Al; B: Mg or Zn)

Quaternary oxides In12Ti10Al2MgO42 (ITAM), In12Ti10Al2ZnO42 (ITAZ), In12Ti10Ga2MgO42 (ITGM), and In12Ti10Ga2ZnO42 (ITGZ), were synthesized by the solid‐state reaction method and the dielectric behavior is reported. The samples were submitted to different sintering temperatures (1473‐1773 K) for 24 h...

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Bibliographic Details
Published in:Journal of the American Ceramic Society 2019-01, Vol.102 (1), p.320-330
Main Authors: Castillón‐Barraza, Felipe Francisco, Durán, Alejandro, Farías, Mario Humberto, Brown, Francisco, Tiburcio Munive, Guillermo, Cubillas, Fernando, Alvarez‐Montaño, Victor Emmanuel
Format: Article
Language:English
Subjects:
Aluminum
Chemical synthesis
Dielectric loss
dielectric materials/properties
Dielectric properties
Electrical resistivity
Magnesium
Microstructure
Oxides
Permittivity
Phase decomposition
phase equilibria
Phase stability
Scanning electron microscopy
Sintering (powder metallurgy)
Spectrum analysis
Stability analysis
Temperature
X ray spectra
Zinc
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Summary:Quaternary oxides In12Ti10Al2MgO42 (ITAM), In12Ti10Al2ZnO42 (ITAZ), In12Ti10Ga2MgO42 (ITGM), and In12Ti10Ga2ZnO42 (ITGZ), were synthesized by the solid‐state reaction method and the dielectric behavior is reported. The samples were submitted to different sintering temperatures (1473‐1773 K) for 24 hours and the phase stability and microstructure were analyzed by X‐ray powder diffraction (XRD) and scanning electron microscopy (SEM). It is found that the phase decomposition occurs above of 1573 K. Microstructure images showed an increase in the grains size as sintering temperature was raised. The dielectric permittivity as a function of temperature and frequency showed acceptable dielectric constant (15‐30) and low dielectric loss (tan δ
ISSN:0002-7820
1551-2916
DOI:10.1111/jace.15920