Trapped charge mapping in crystalline organic transistors by using scanning Kelvin probe force microscopy

Trapped charge distributions at the interfaces between gate insulators and crystalline organic semiconductors in thin-film transistors are visualized by using a technique based on scanning Kelvin probe force microscopy (SKFM). For the charge density measurement, an ac voltage is applied to the gate...

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Bibliographic Details
Published in:Applied physics letters 2014-11, Vol.105 (19)
Main Authors: Ando, Masahiko, Heike, Seiji, Kawasaki, Masahiro, Hashizume, Tomihiro
Format: Article
Language:English
Subjects:
Applied physics
Charge density
Charge distribution
Crystal structure
Crystallinity
Density measurement
Electric potential
Insulators
Microscopy
Organic semiconductors
Semiconductor devices
Thin film transistors
Transistors
Trapped charge
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Summary:Trapped charge distributions at the interfaces between gate insulators and crystalline organic semiconductors in thin-film transistors are visualized by using a technique based on scanning Kelvin probe force microscopy (SKFM). For the charge density measurement, an ac voltage is applied to the gate electrode and its amplitude is adjusted so as to keep the electrostatic force constant between the SKFM tip and the semiconductor surface. The trapped charge density shows characteristic spatial distributions in the channel region, which varies by voltage stresses applied to the transistors. By comparing the charge distributions with the surface-potential profiles, trap mechanisms are discussed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4901946