Monolithic color-selective ultraviolet (266–315 nm) photodetector based on a wurtzite MgxZn1−xO film

A unique ultraviolet photodetector based on a metal-semiconductor-metal structure was fabricated from a wurtzite MgxZn1−xO film with gradually changing Mg content, homoepitaxially grown on a BeO-buffered ZnO substrate. The BeO layer filtered out the substrate photoresponse. The cutoff wavelength of...

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Bibliographic Details
Published in:Applied physics letters 2014-09, Vol.105 (13)
Main Authors: Hou, Y. N., Mei, Z. X., Liang, H. L., Gu, C. Z., Du, X. L.
Format: Article
Language:English
Subjects:
Applied physics
Bias
Cut off wavelength
Epitaxial growth
Magnesium
Optical activity
Photometers
Red shift
Substrates
Ultraviolet detectors
Ultraviolet radiation
Wurtzite
Zinc oxide
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Summary:A unique ultraviolet photodetector based on a metal-semiconductor-metal structure was fabricated from a wurtzite MgxZn1−xO film with gradually changing Mg content, homoepitaxially grown on a BeO-buffered ZnO substrate. The BeO layer filtered out the substrate photoresponse. The cutoff wavelength of the photodetector under zero bias was 266 nm with a UV/visible light rejection ratio of greater than 2 orders of magnitude in the deep UV region. Applying a bias, the cutoff wavelength exhibited a prominent continuous redshift from 266 (0 V) to 315 nm (3 V), indicating the capability for multi-band UV detection on a monolithic chip. The bias-controlled wavelength-selective UV photoresponse mechanism occurred in the optically active area in a compositionally distributed MgxZn1−xO alloy that was achieved by molecular epitaxial growth.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4897300