Gate tuning of anomalous Hall effect in ferromagnetic metal SrRuO3

The electric field effect on ferromagnetism offers a new dimension in the recent advancement of spintronics. We report on the gate control of transport properties in thin films of oxide-based ferromagnetic metal, SrRuO3. An electric double layer transistor configuration was utilized with an ionic li...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2014-10, Vol.105 (16)
Main Authors: Shimizu, Sunao, Takahashi, Kei S., Kubota, Masashi, Kawasaki, Masashi, Tokura, Yoshinori, Iwasa, Yoshihiro
Format: Article
Language:English
Subjects:
Applied physics
Carrier density
Charge transport
Dielectric strength
Electric double layer
Electric fields
Ferromagnetic materials
Hall effect
Ionic liquids
Ions
Spintronics
Thin films
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The electric field effect on ferromagnetism offers a new dimension in the recent advancement of spintronics. We report on the gate control of transport properties in thin films of oxide-based ferromagnetic metal, SrRuO3. An electric double layer transistor configuration was utilized with an ionic liquid dielectric to apply a strong electric field on a SrRuO3 thin film of 5 monolayers in thickness. The application of gate voltage induced a clear electroresistance effect, despite a considerably-large initial carrier density of the order of 1022 cm−3. Furthermore, we found that the gate modulation of the anomalous Hall conductivity σxy, which was as large as ∼±40% at low temperatures, was about three times larger than that of the longitudinal conductivity σxx. The variation of σxy is characterized by the power-law scaling relation with σxx, which is widely observed in a bad metal regime of the charge transport.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4899145