Excitonic localization in AlN-rich AlxGa1−xN/AlyGa1−yN multi-quantum-well grain boundaries

AlGaN/AlGaN multi-quantum-wells (MQW) with AlN-rich grains have been grown by metal organic chemical vapor deposition. The grains are observed to have strong excitonic localization characteristics that are affected by their sizes. The tendency to confine excitons progressively intensifies with incre...

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Bibliographic Details
Published in:Applied physics letters 2014-09, Vol.105 (12)
Main Authors: Ajia, Idris A., Edwards, P. R., Liu, Z., Yan, J. C., Martin, R. W., Roqan, I. S.
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Aluminum nitride
Applied physics
Cathodoluminescence
Grain boundaries
Localization
Metalorganic chemical vapor deposition
Multi Quantum Wells
Organic chemicals
Organic chemistry
Photoluminescence
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Summary:AlGaN/AlGaN multi-quantum-wells (MQW) with AlN-rich grains have been grown by metal organic chemical vapor deposition. The grains are observed to have strong excitonic localization characteristics that are affected by their sizes. The tendency to confine excitons progressively intensifies with increasing grain boundary area. Photoluminescence results indicate that the MQW have a dominant effect on the peak energy of the near-bandedge emission at temperatures below 150 K, with the localization properties of the grains becoming evident beyond 150 K. Cathodoluminescence maps reveal that the grain boundary has no effect on the peak intensities of the AlGaN/AlGaN samples.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4896681