Gate control of the spin mobility through the modification of the spin-orbit interaction in two-dimensional systems

Spin drag measurements were performed in a two-dimensional electron system set close to the crossed spin helix regime and coupled by strong intersubband scattering. In a sample with an uncommon combination of long spin lifetime and high charge mobility, the drift transport allows us to determine the...

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Bibliographic Details
Published in:Physical review. B 2017-06, Vol.95 (24), p.245315, Article 245315
Main Authors: Luengo-Kovac, M., Moraes, F. C. D., Ferreira, G. J., Ribeiro, A. S. L., Gusev, G. M., Bakarov, A. K., Sih, V., Hernandez, F. G. G.
Format: Article
Language:English
Subjects:
Anisotropy
Charge transport
Couplings
Drift
Random walk
Spin-orbit interactions
System dynamics
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Summary:Spin drag measurements were performed in a two-dimensional electron system set close to the crossed spin helix regime and coupled by strong intersubband scattering. In a sample with an uncommon combination of long spin lifetime and high charge mobility, the drift transport allows us to determine the spin-orbit field and the spin mobility anisotropies. We used a random walk model to describe the system dynamics and found excellent agreement for the Rashba and Dresselhaus couplings. The proposed two-subband system displays a large tuning lever arm for the Rashba constant with gate voltage, which provides a new path towards a spin transistor. Furthermore, the data show large spin mobility controlled by the spin-orbit constants setting the field along the direction perpendicular to the drift velocity. This work directly reveals the resistance experienced in the transport of a spin-polarized packet as a function of the strength of anisotropic spin-orbit fields.
ISSN:2469-9950
2469-9969
DOI:10.1103/PhysRevB.95.245315