A unified physical model of Seebeck coefficient in amorphous oxide semiconductor thin-film transistors

A unified physical model for Seebeck coefficient was presented based on the multiple-trapping and release theory for amorphous oxide semiconductor thin-film transistors. According to the proposed model, the Seebeck coefficient is attributed to the Fermi-Dirac statistics combined with the energy depe...

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Bibliographic Details
Published in:Journal of applied physics 2014-09, Vol.116 (10)
Main Authors: Lu, Nianduan, Li, Ling, Sun, Pengxiao, Banerjee, Writam, Liu, Ming
Format: Article
Language:English
Subjects:
Applied physics
Computer simulation
Electric potential
Fermi-Dirac statistics
Indium gallium zinc oxide
Seebeck effect
Semiconductor devices
Temperature dependence
Thin film transistors
Transistors
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Summary:A unified physical model for Seebeck coefficient was presented based on the multiple-trapping and release theory for amorphous oxide semiconductor thin-film transistors. According to the proposed model, the Seebeck coefficient is attributed to the Fermi-Dirac statistics combined with the energy dependent trap density of states and the gate-voltage dependence of the quasi-Fermi level. The simulation results show that the gate voltage, energy disorder, and temperature dependent Seebeck coefficient can be well described. The calculation also shows a good agreement with the experimental data in amorphous In-Ga-Zn-O thin-film transistor.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4895046