Large current modulation in exfoliated-graphene/MoS2/metal vertical heterostructures

Graphene-based vertical field effect transistors have attracted considerable attention in the light of realizing high-speed switching devices; however, the functionality of such devices has been limited by either their small ON-OFF current ratios or ON current densities. We fabricate a graphene/MoS2...

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Bibliographic Details
Published in:Applied physics letters 2014-08, Vol.105 (8)
Main Authors: Moriya, Rai, Yamaguchi, Takehiro, Inoue, Yoshihisa, Morikawa, Sei, Sata, Yohta, Masubuchi, Satoru, Machida, Tomoki
Format: Article
Language:English
Subjects:
Applied physics
Current density
Current modulation
Exfoliation
Field effect transistors
Graphene
Heterostructures
Molybdenum disulfide
Semiconductor devices
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Summary:Graphene-based vertical field effect transistors have attracted considerable attention in the light of realizing high-speed switching devices; however, the functionality of such devices has been limited by either their small ON-OFF current ratios or ON current densities. We fabricate a graphene/MoS2/metal vertical heterostructure by using mechanical exfoliation and dry transfer of graphene and MoS2 layers. The van der Waals interface between graphene and MoS2 exhibits a Schottky barrier, thus enabling the possibility of well-defined current rectification. The height of the Schottky barrier can be strongly modulated by an external gate electric field owing to the small density of states of graphene. We obtain large current modulation exceeding 105 simultaneously with a large current density of ∼104 A/cm2, thereby demonstrating the superior performance of the exfoliated-graphene/MoS2/metal vertical field effect transistor.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4894256