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Strain driven anisotropic magnetoresistance in antiferromagnetic La0.4Sr0.6MnO3

We investigate the effects of strain on antiferromagnetic (AFM) single crystal thin films of La1−xSrxMnO3 (x = 0.6). Nominally unstrained samples have strong magnetoresistance with anisotropic magnetoresistances (AMR) of up to 8%. Compressive strain suppresses magnetoresistance but generates AMR val...

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Bibliographic Details
Published in:Applied physics letters 2014-08, Vol.105 (5)
Main Authors: Wong, A. T., Beekman, C., Guo, H., Siemons, W., Gai, Z., Arenholz, E., Takamura, Y., Ward, T. Z.
Format: Article
Language:English
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Summary:We investigate the effects of strain on antiferromagnetic (AFM) single crystal thin films of La1−xSrxMnO3 (x = 0.6). Nominally unstrained samples have strong magnetoresistance with anisotropic magnetoresistances (AMR) of up to 8%. Compressive strain suppresses magnetoresistance but generates AMR values of up to 63%. Tensile strain presents the only case of a metal-insulator transition and demonstrates a previously unreported AMR behavior. In all three cases, we find evidence of magnetic ordering and no indication of a global ferromagnetic phase transition. These behaviors are attributed to epitaxy induced changes in orbital occupation driving different magnetic ordering types. Our findings suggest that different AFM ordering types have a profound impact on the AMR magnitude and character.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4892420