Investigation of the Mn3− δ Ga/MgO interface for magnetic tunneling junctions

The Mn3Ga Heusler compound and related alloys are the most promising materials for the realization of spin-transfer-torque magnetoresistive memories. Mn–Ga films exhibits perpendicular magnetic anisotropy and high spin polarization and can be used to improve the performance of MgO-based magneto tunn...

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Bibliographic Details
Published in:Journal of applied physics 2014-07, Vol.116 (3)
Main Authors: ViolBarbosa, C. E., Ouardi, S., Kubota, T., Mizukami, S., Fecher, G. H., Miyazaki, T., Kozina, X., Ikenaga, E., Felser, C.
Format: Article
Language:English
Subjects:
Applied physics
Deposition
Electrons
Gallium
Magnesium oxide
Magnetic anisotropy
Magnetoresistivity
Manganese
Organic chemistry
Oxidation
Performance enhancement
Polarization (spin alignment)
X ray spectra
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Summary:The Mn3Ga Heusler compound and related alloys are the most promising materials for the realization of spin-transfer-torque magnetoresistive memories. Mn–Ga films exhibits perpendicular magnetic anisotropy and high spin polarization and can be used to improve the performance of MgO-based magneto tunneling junctions. The interface between Mn–Ga and MgO films were chemically characterized by hard x-ray photoelectron spectroscopy. The experiment indicated the formation of Ga-O bonds at the interface and evidenced changes in the local environment of Mn atoms in the proximity of the MgO film. We show that the deposition of few monoatomic layers of Mg on top of Mn–Ga film, before the MgO deposition, strongly suppresses the oxidation of gallium.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4890582