Ge1−xSnx alloys synthesized by ion implantation and pulsed laser melting

The tunable bandgap and the high carrier mobility of Ge1−xSnx alloys stimulate a large effort for bandgap and strain engineering for Ge based materials using silicon compatible technology. In this Letter, we present the fabrication of highly mismatched Ge1−xSnx alloys by ion implantation and pulsed...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2014-07, Vol.105 (4)
Main Authors: Gao, Kun, Prucnal, S., Huebner, R., Baehtz, C., Skorupa, I., Wang, Yutian, Skorupa, W., Helm, M., Zhou, Shengqiang
Format: Article
Language:English
Subjects:
Applied physics
Carrier mobility
Chemical synthesis
Energy gap
Germanium
Ion implantation
Laser beam melting
Pulsed lasers
Shrinkage
Spectroellipsometry
Tin
Tunable lasers
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The tunable bandgap and the high carrier mobility of Ge1−xSnx alloys stimulate a large effort for bandgap and strain engineering for Ge based materials using silicon compatible technology. In this Letter, we present the fabrication of highly mismatched Ge1−xSnx alloys by ion implantation and pulsed laser melting with Sn concentration ranging from 0.5 at. % up to 1.5 at. %. According to the structural investigations, the formed Ge1−xSnx alloys are monocrystalline with high Sn-incorporation rate. The shrinkage of the bandgap of Ge1−xSnx alloys with increasing Sn content is proven by the red-shift of the E1 and E1 + Δ1 critical points in spectroscopic ellipsometry. Our investigation provides a chip technology compatible route to prepare high quality monocrystalline Ge1−xSnx alloys.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4891848