Spectroscopic and Microscopic Defect and Carrier-Lifetime Analysis in Cadmium Telluride

Using experiments and theory, we analyze "carrier-lifetime-killer" semiconductor bulk defects in CdTe. We can estimate the concentration of tellurium antisite (Te Cd ) recombination centers in undoped CdTe from the kinetic modeling of injection-dependent photoluminescence (PL) lifetimes. F...

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Bibliographic Details
Published in:IEEE journal of photovoltaics 2018-11, Vol.8 (6), p.1754-1760
Main Authors: Kuciauskas, Darius, Krasikov, Dmitry
Format: Article
Language:English
Subjects:
Cadmium
Cadmium compounds
Cadmium telluride
Cadmium tellurides
Carrier recombination
Characterization of defects in PV
Charge carrier lifetime
CIGS and CdTe thin-film solar cells
Crystal defects
Crystals
Doping
Emission spectra
II-VI semiconductor materials
Intermetallic compounds
Interstitials
Kinetic theory
Lifetime
MATERIALS SCIENCE
Photoluminescence
Photovoltaic cells
Point defects
Radiative recombination
Single crystals
SOLAR ENERGY
Stoichiometry
Tellurides
Tellurium
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Summary:Using experiments and theory, we analyze "carrier-lifetime-killer" semiconductor bulk defects in CdTe. We can estimate the concentration of tellurium antisite (Te Cd ) recombination centers in undoped CdTe from the kinetic modeling of injection-dependent photoluminescence (PL) lifetimes. For the Cd-rich stoichiometry, the concentration of lifetime-limiting [Te Cd ] is ≥10 13  cm -3 . For the Te-rich stoichiometry, we find a smaller hole-capture rate constant than predicted by theory, which could be because of Te Cd association with the Te interstitials. We also compare PL emission spectra, carrier lifetimes, and radiative efficiencies for Cu, P, and As doping and analyze the microscopic distribution of carrier lifetimes in As-doped single-crystal CdTe. In all the cases examined here, point defects are the dominant bulk recombination centers. Carrier lifetimes are the longest in undoped CdTe, but radiative efficiencies are the highest with group-V doping.
ISSN:2156-3381
2156-3403
DOI:10.1109/JPHOTOV.2018.2866180