Role of oxygen vacancies in resistive switching in Pt/Nb-doped SrTiO3

Oxygen vacancies at the metal/oxide interface, driven by an electric field, have been considered responsible for the switching to the low-resistance state. We studied the electrical properties, along with microscopic observations, of the Pt/Nb-doped SrTiO3 (001) single-crystal system. Electron energ...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2014-11, Vol.105 (18)
Main Authors: Park, Jinho, Kwon, Deok-Hwang, Park, Hongwoo, Jung, C. U., Kim, M.
Format: Article
Language:English
Subjects:
Applied physics
Electrical properties
Electron energy loss spectroscopy
Energy dissipation
Lattice vacancies
Oxygen
Single crystals
Strontium titanates
Switching
Vacancies
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Oxygen vacancies at the metal/oxide interface, driven by an electric field, have been considered responsible for the switching to the low-resistance state. We studied the electrical properties, along with microscopic observations, of the Pt/Nb-doped SrTiO3 (001) single-crystal system. Electron energy loss spectroscopy revealed highly accumulated oxygen vacancies at the interface in the high-resistance state, contrasting to common explanation. Higher resistance state by more oxygen vacancies was further confirmed in Pt/H2-annealed SrTiO3. These results suggest the presence of an interfacial state which dominantly determined the resistivity by changing the barrier height at the interface.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4901053